Session: VIB-06-01 MEMS, NEMS and Control of Vibration, Shock and Noise

Paper Number: 68745

Start Time: August 19, 11:10 AM

68745 - A Topological Insulator Based Electroacoustic Transistor 

This paper presents the design of an electroacoustic transistor employing topological phononics. The functioning of this device is analogous to that of a field effect transistor in electronics where a voltage applied at one terminal enables current flow across two other terminals. The proposed device is a topological insulator made of a monolithic periodic structure with a hexagonal unit cell containing two piezoelectric disks connected to switchable negative impedance shunt circuits. Symmetry within the unit cell is broken by switching on one of the circuits. This creates a topological band gap in the medium which enables interface states to exist. An input wave along one such interface in the structure is used to form a channel between a source and receiver (placed elsewhere in the structure) through which a wave can propagate. The amplitude of input wave is used to control the switching of shunt circuits, which in turn changes the material properties of PZT disks in a control region within the monolithic structure, thereby allowing or prohibiting topologically protected waves through the channel. The structural and electrical design of the electroacoustic transistor is presented along with experimental results of the electrical implementation. The proposed design finds applications in developing electroacoustic logic gates, and amplitude multiplexing, etc.

Presenting Author: Sai Aditya Raman Kuchibhatla Georgia Institute of Technology

Authors:

Sai Aditya Raman Kuchibhatla Georgia Institute of Technology
Amir Darabi Georgia Institute of Technology
Michael Leamy Georgia Institute of Technology